Electron channelling contrast imaging of dislocations in a conventional SEM

Bo Pang; Ian Jones; Jeremy C F Millett; Glenn Whiteman; Yu-Lung Chiu

doi:10.1080/14786435.2016.1262971

Electron channelling contrast imaging of dislocations in a conventional SEM

Bo Pang
, Ian Jones
, Jeremy C F Millett
, Glenn Whiteman
, Yu-Lung Chiu

Metallurgy and Materials

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

524 Downloads (Pure)

Abstract

Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.

Original language	English
Pages (from-to)	346-359
Journal	Philosophical Magazine
Volume	97
Issue number	5
DOIs	https://doi.org/10.1080/14786435.2016.1262971
Publication status	Published - 6 Dec 2016

Keywords

Electron microscopy
electron channelling
dislocations
tantalum
Computer Simulation
crystal defects
defect analysis

Access to Document

10.1080/14786435.2016.1262971Licence: None: All rights reserved

Electron channelling contrast imaging of dislocations in a conventional SEM
Checked for eligibility: 01/12/2016. This is an Accepted Manuscript of an article published by Taylor & Francis in Philosophy Magazine on [date of publication], available online: http://www.tandfonline.com/10.1080/14786435.2016.1262971
Accepted author manuscript, 1.32 MBLicence: None: All rights reserved

Cite this

@article{29678b9e2d8e44d19ecc4a3271af6ac7,

title = "Electron channelling contrast imaging of dislocations in a conventional SEM",

abstract = "Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.",

keywords = "Electron microscopy, electron channelling, dislocations, tantalum, Computer Simulation, crystal defects, defect analysis",

author = "Bo Pang and Ian Jones and Millett, \{Jeremy C F\} and Glenn Whiteman and Yu-Lung Chiu",

year = "2016",

month = dec,

day = "6",

doi = "10.1080/14786435.2016.1262971",

language = "English",

volume = "97",

pages = "346--359",

journal = "Philosophical Magazine",

issn = "1478-6435",

publisher = "Taylor \& Francis",

number = "5",

}

TY - JOUR

T1 - Electron channelling contrast imaging of dislocations in a conventional SEM

AU - Pang, Bo

AU - Jones, Ian

AU - Millett, Jeremy C F

AU - Whiteman, Glenn

AU - Chiu, Yu-Lung

PY - 2016/12/6

Y1 - 2016/12/6

N2 - Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.

AB - Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.

KW - Electron microscopy

KW - electron channelling

KW - dislocations

KW - tantalum

KW - Computer Simulation

KW - crystal defects

KW - defect analysis

U2 - 10.1080/14786435.2016.1262971

DO - 10.1080/14786435.2016.1262971

M3 - Article

SN - 1478-6435

VL - 97

SP - 346

EP - 359

JO - Philosophical Magazine

JF - Philosophical Magazine

IS - 5

ER -

Electron channelling contrast imaging of dislocations in a conventional SEM

Abstract

Keywords

Access to Document

Fingerprint

Cite this