Electron channelling contrast imaging of dislocations in a conventional SEM

Bo Pang, Ian Jones, Jeremy C F Millett, Glenn Whiteman, Yu-Lung Chiu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)
317 Downloads (Pure)

Abstract

Dislocations in shock loaded tantalum single crystals were imaged using both TEM and ECCI in an SEM with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.
Original languageEnglish
Pages (from-to)346-359
JournalPhilosophical Magazine
Volume97
Issue number5
DOIs
Publication statusPublished - 6 Dec 2016

Keywords

  • Electron microscopy
  • electron channelling
  • dislocations
  • tantalum
  • Computer Simulation
  • crystal defects
  • defect analysis

Fingerprint

Dive into the research topics of 'Electron channelling contrast imaging of dislocations in a conventional SEM'. Together they form a unique fingerprint.

Cite this