Abstract
A three-section distributed amplifier was constructed using RF power MOSFETs and microstrip transmission lines delivering higher output levels than previously reported. An output power of 0.7 W (28.5 dBm) was obtained at the -1 dB compression point at class AB bias, giving 11 dB gain over a 700 MHz bandwidth.
| Original language | English |
|---|---|
| Pages (from-to) | 187-188 |
| Number of pages | 2 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 20 |
| Issue number | 3 |
| Publication status | Published - 1 Jan 1999 |