Distributed mosfet power amplifier

S. Yuen, P. Gardner, J.L.B. Walker

Research output: Contribution to journalArticlepeer-review


A three-section distributed amplifier was constructed using RF power MOSFETs and microstrip transmission lines delivering higher output levels than previously reported. An output power of 0.7 W (28.5 dBm) was obtained at the -1 dB compression point at class AB bias, giving 11 dB gain over a 700 MHz bandwidth.
Original languageEnglish
Pages (from-to)187-188
Number of pages2
JournalMicrowave and Optical Technology Letters
Issue number3
Publication statusPublished - 1 Jan 1999


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