Dielectric characterization of a ferroelectric film in the sub-GHz region

Peng Bao; Timothy Jackson; Michael Lancaster

doi:10.1088/0022-3727/41/18/185410

Dielectric characterization of a ferroelectric film in the sub-GHz region

Peng Bao, Timothy Jackson, Michael Lancaster

Electronic, Electrical and Systems Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

A new method is proposed for the measurement of the dielectric properties of BaxSr1-xTiO3 (BST) thin films in the frequency range 10(6)-1.8 x 10(9) Hz. A co-planar waveguide (CPW) transmission line was employed for impedance measurements via on-wafer probing. The measured impedance of the CPW line was found as a function of the probing position on the line. A simplified model of the CPW line under test allows the intrinsic dielectric properties of BST thin films to be extracted from the measured position-dependent impedance. Experimental results obtained by this new method agree well with those obtained by two-port S-parameters measurement at microwave frequencies using the same CPW structure.

Original language	English
Pages (from-to)	185410-
Journal	Journal of Physics D: Applied Physics
Volume	41
Issue number	18
Early online date	28 Aug 2008
DOIs	https://doi.org/10.1088/0022-3727/41/18/185410
Publication status	Published - 21 Sept 2008

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10.1088/0022-3727/41/18/185410

Advanced Microwave Devices for Frequency-Agile Applications
Lancaster, M. (Principal Investigator) & Jackson, T. (Co-Investigator)
Engineering & Physical Science Research Council
28/11/05 → 27/05/09
Project: Research Councils

Cite this

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title = "Dielectric characterization of a ferroelectric film in the sub-GHz region",

abstract = "A new method is proposed for the measurement of the dielectric properties of BaxSr1-xTiO3 (BST) thin films in the frequency range 10(6)-1.8 x 10(9) Hz. A co-planar waveguide (CPW) transmission line was employed for impedance measurements via on-wafer probing. The measured impedance of the CPW line was found as a function of the probing position on the line. A simplified model of the CPW line under test allows the intrinsic dielectric properties of BST thin films to be extracted from the measured position-dependent impedance. Experimental results obtained by this new method agree well with those obtained by two-port S-parameters measurement at microwave frequencies using the same CPW structure.",

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AU - Bao, Peng

AU - Jackson, Timothy

AU - Lancaster, Michael

PY - 2008/9/21

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N2 - A new method is proposed for the measurement of the dielectric properties of BaxSr1-xTiO3 (BST) thin films in the frequency range 10(6)-1.8 x 10(9) Hz. A co-planar waveguide (CPW) transmission line was employed for impedance measurements via on-wafer probing. The measured impedance of the CPW line was found as a function of the probing position on the line. A simplified model of the CPW line under test allows the intrinsic dielectric properties of BST thin films to be extracted from the measured position-dependent impedance. Experimental results obtained by this new method agree well with those obtained by two-port S-parameters measurement at microwave frequencies using the same CPW structure.

AB - A new method is proposed for the measurement of the dielectric properties of BaxSr1-xTiO3 (BST) thin films in the frequency range 10(6)-1.8 x 10(9) Hz. A co-planar waveguide (CPW) transmission line was employed for impedance measurements via on-wafer probing. The measured impedance of the CPW line was found as a function of the probing position on the line. A simplified model of the CPW line under test allows the intrinsic dielectric properties of BST thin films to be extracted from the measured position-dependent impedance. Experimental results obtained by this new method agree well with those obtained by two-port S-parameters measurement at microwave frequencies using the same CPW structure.

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DO - 10.1088/0022-3727/41/18/185410

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SP - 185410-

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 18

ER -

Dielectric characterization of a ferroelectric film in the sub-GHz region

Abstract

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Advanced Microwave Devices for Frequency-Agile Applications

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