Design, fabrication, and characterization of a D-band bolometric power sensor

Milan Salek; Murat Celep; Thomas Weimann; Daniel Stokes; Xiaobang Shang; Gia Ngoc Phung; Karsten Kuhlmann; James Skinner; Yi Wang

doi:10.1109/TIM.2022.3159009

Design, fabrication, and characterization of a D-band bolometric power sensor

Milan Salek, Murat Celep, Thomas Weimann, Daniel Stokes, Xiaobang Shang, Gia Ngoc Phung, Karsten Kuhlmann, James Skinner, Yi Wang

Research output: Contribution to journal › Article › peer-review

244 Downloads (Pure)

Abstract

This article presents the design, fabrication, and characterization of a D-band (110–170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The sensor demonstrates reasonable performance with a return loss of better than 15 dB across the entire D-band and the rise and fall times better than 1.8 ms. The sensor achieves high power linearity between −10 and +8 dBm. Frequency response of the sensor was measured, and its flatness changes no more than 20% across the frequency band. Furthermore, this power sensor has been characterized in the microcalorimeter, and an effective efficiency of over 90% could be achieved. For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented.

Original language	English
Article number	8002509
Pages (from-to)	1
Number of pages	9
Journal	IEEE Transactions on Instrumentation and Measurement
Volume	71
DOIs	https://doi.org/10.1109/TIM.2022.3159009
Publication status	Published - 11 Mar 2022

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

D-Band
WR 6.5 waveguide flange
bolometric
characterization
metrology
millimeter-wave
power sensor

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/TIM.2022.3159009Licence: None: All rights reserved

salekm2022design
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Accepted author manuscript, 1.72 MBLicence: Other (please specify with Rights Statement)

Cite this

@article{80886b51cb104cf59f0aab76301004ec,

title = "Design, fabrication, and characterization of a D-band bolometric power sensor",

abstract = "This article presents the design, fabrication, and characterization of a D-band (110–170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The sensor demonstrates reasonable performance with a return loss of better than 15 dB across the entire D-band and the rise and fall times better than 1.8 ms. The sensor achieves high power linearity between −10 and +8 dBm. Frequency response of the sensor was measured, and its flatness changes no more than 20\% across the frequency band. Furthermore, this power sensor has been characterized in the microcalorimeter, and an effective efficiency of over 90\% could be achieved. For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented.",

keywords = "D-Band, WR 6.5 waveguide flange, bolometric, characterization, metrology, millimeter-wave, power sensor",

author = "Milan Salek and Murat Celep and Thomas Weimann and Daniel Stokes and Xiaobang Shang and Phung, \{Gia Ngoc\} and Karsten Kuhlmann and James Skinner and Yi Wang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

month = mar,

day = "11",

doi = "10.1109/TIM.2022.3159009",

language = "English",

volume = "71",

pages = "1",

journal = "IEEE Transactions on Instrumentation and Measurement",

issn = "0018-9456",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - Design, fabrication, and characterization of a D-band bolometric power sensor

AU - Salek, Milan

AU - Celep, Murat

AU - Weimann, Thomas

AU - Stokes, Daniel

AU - Shang, Xiaobang

AU - Phung, Gia Ngoc

AU - Kuhlmann, Karsten

AU - Skinner, James

AU - Wang, Yi

PY - 2022/3/11

Y1 - 2022/3/11

N2 - This article presents the design, fabrication, and characterization of a D-band (110–170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The sensor demonstrates reasonable performance with a return loss of better than 15 dB across the entire D-band and the rise and fall times better than 1.8 ms. The sensor achieves high power linearity between −10 and +8 dBm. Frequency response of the sensor was measured, and its flatness changes no more than 20% across the frequency band. Furthermore, this power sensor has been characterized in the microcalorimeter, and an effective efficiency of over 90% could be achieved. For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented.

AB - This article presents the design, fabrication, and characterization of a D-band (110–170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The sensor demonstrates reasonable performance with a return loss of better than 15 dB across the entire D-band and the rise and fall times better than 1.8 ms. The sensor achieves high power linearity between −10 and +8 dBm. Frequency response of the sensor was measured, and its flatness changes no more than 20% across the frequency band. Furthermore, this power sensor has been characterized in the microcalorimeter, and an effective efficiency of over 90% could be achieved. For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented.

KW - D-Band

KW - WR 6.5 waveguide flange

KW - bolometric

KW - characterization

KW - metrology

KW - millimeter-wave

KW - power sensor

UR - http://www.scopus.com/inward/record.url?scp=85126271478&partnerID=8YFLogxK

U2 - 10.1109/TIM.2022.3159009

DO - 10.1109/TIM.2022.3159009

M3 - Article

SN - 0018-9456

VL - 71

SP - 1

JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

M1 - 8002509

ER -

Design, fabrication, and characterization of a D-band bolometric power sensor

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this