Design, fabrication, and characterization of a D-band bolometric power sensor

Milan Salek, Murat Celep, Thomas Weimann, Daniel Stokes, Xiaobang Shang, Gia Ngoc Phung, Karsten Kuhlmann, James Skinner, Yi Wang

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This article presents the design, fabrication, and characterization of a D-band (110–170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The sensor demonstrates reasonable performance with a return loss of better than 15 dB across the entire D-band and the rise and fall times better than 1.8 ms. The sensor achieves high power linearity between −10 and +8 dBm. Frequency response of the sensor was measured, and its flatness changes no more than 20% across the frequency band. Furthermore, this power sensor has been characterized in the microcalorimeter, and an effective efficiency of over 90% could be achieved. For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented.
Original languageEnglish
Article number8002509
Pages (from-to)1
Number of pages9
JournalIEEE Transactions on Instrumentation and Measurement
Publication statusPublished - 11 Mar 2022

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.


  • D-Band
  • WR 6.5 waveguide flange
  • bolometric
  • characterization
  • metrology
  • millimeter-wave
  • power sensor

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering


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