Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation

This work presents electrical and electro-optical studies performed on light-emitting capacitors with silicon-rich silicon oxide fabricated by plasma-enhanced chemical vapor deposition and by the implantation of Si ions in thermally grown SiO2. The influence of the fabrication technique and silicon content on electrical, electro-optical, and emission spectra characteristics has been studied. Results on the electrical behavior show a significant dependence on both the fabrication technique and Si content that translates in variations on electroluminescence with fabrication technique and silicon excess. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692082]