Chemically amplified phenolic fullerene electron beam resist

Dongxu Yang, A. Frommhold, X. Xue, R. E. Palmer, Alexander Robinson

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)
291 Downloads (Pure)


Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of [similar]40 μC cm−2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as [similar]20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm half-pitch at slightly higher dose.
Original languageEnglish
Pages (from-to)1505-1512
JournalJournal of Materials Chemistry C
Issue number8
Early online date18 Dec 2013
Publication statusPublished - 28 Feb 2014


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