Charge transport in nanocrystal wires created by direct electron beam writing

S Jacke; JL Plaza; Jess Wilcoxon; Richard Palmer; P Beecher; G De Marzi; G Redmond; AJ Quinn; Y Chen

doi:10.1049/mnl.2010.0048

Charge transport in nanocrystal wires created by direct electron beam writing

S Jacke, JL Plaza, Jess Wilcoxon, Richard Palmer, P Beecher, G De Marzi, G Redmond, AJ Quinn, Y Chen

Physics and Astronomy

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

The authors report the fabrication and electrical characterisation of nanowires created via direct electron beam writing in films of passivated gold nanocrystals. Charge transport measurements yield room temperature resistances in the range 10(5) - 10(8) Omega. Variable temperature measurements yield two distinct sets of characteristics: activated conduction (high resistance) consistent with weakly coupled metal nanocrystals separated by alkyl-thiol tunnel barriers and quasi-localised behaviour (low resistance) consistent with stronger coupling between granular metallic islands in a carbonaceous matrix. The data indicate that electron beam writing is a promising method for local manipulation of inter-nanocrystal coupling in nanocrystal arrays.

Original language	English
Pages (from-to)	274-277
Number of pages	4
Journal	Micro & Nano Letters
Volume	5
Issue number	5
DOIs	https://doi.org/10.1049/mnl.2010.0048
Publication status	Published - 1 Oct 2010

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10.1049/mnl.2010.0048

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title = "Charge transport in nanocrystal wires created by direct electron beam writing",

abstract = "The authors report the fabrication and electrical characterisation of nanowires created via direct electron beam writing in films of passivated gold nanocrystals. Charge transport measurements yield room temperature resistances in the range 10(5) - 10(8) Omega. Variable temperature measurements yield two distinct sets of characteristics: activated conduction (high resistance) consistent with weakly coupled metal nanocrystals separated by alkyl-thiol tunnel barriers and quasi-localised behaviour (low resistance) consistent with stronger coupling between granular metallic islands in a carbonaceous matrix. The data indicate that electron beam writing is a promising method for local manipulation of inter-nanocrystal coupling in nanocrystal arrays.",

author = "S Jacke and JL Plaza and Jess Wilcoxon and Richard Palmer and P Beecher and {De Marzi}, G and G Redmond and AJ Quinn and Y Chen",

year = "2010",

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doi = "10.1049/mnl.2010.0048",

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AU - Jacke, S

AU - Plaza, JL

AU - Wilcoxon, Jess

AU - Palmer, Richard

AU - Beecher, P

AU - De Marzi, G

AU - Redmond, G

AU - Quinn, AJ

AU - Chen, Y

PY - 2010/10/1

Y1 - 2010/10/1

N2 - The authors report the fabrication and electrical characterisation of nanowires created via direct electron beam writing in films of passivated gold nanocrystals. Charge transport measurements yield room temperature resistances in the range 10(5) - 10(8) Omega. Variable temperature measurements yield two distinct sets of characteristics: activated conduction (high resistance) consistent with weakly coupled metal nanocrystals separated by alkyl-thiol tunnel barriers and quasi-localised behaviour (low resistance) consistent with stronger coupling between granular metallic islands in a carbonaceous matrix. The data indicate that electron beam writing is a promising method for local manipulation of inter-nanocrystal coupling in nanocrystal arrays.

AB - The authors report the fabrication and electrical characterisation of nanowires created via direct electron beam writing in films of passivated gold nanocrystals. Charge transport measurements yield room temperature resistances in the range 10(5) - 10(8) Omega. Variable temperature measurements yield two distinct sets of characteristics: activated conduction (high resistance) consistent with weakly coupled metal nanocrystals separated by alkyl-thiol tunnel barriers and quasi-localised behaviour (low resistance) consistent with stronger coupling between granular metallic islands in a carbonaceous matrix. The data indicate that electron beam writing is a promising method for local manipulation of inter-nanocrystal coupling in nanocrystal arrays.

U2 - 10.1049/mnl.2010.0048

DO - 10.1049/mnl.2010.0048

M3 - Article

VL - 5

SP - 274

EP - 277

JO - Micro & Nano Letters

JF - Micro & Nano Letters

IS - 5

ER -

Charge transport in nanocrystal wires created by direct electron beam writing

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