Characterization of sidewall roughness for silicon microstructures in micro actuator

G Han, Z Jiang, W Jing, J Gao, Philip Prewett, Kyle Jiang

Research output: Contribution to journalArticle


Thermal micro actuators are fabricated using deep reactive ion etching (DRIE) technique on silicon on insulator (SOI) substrates. The sidewalls of silicon microstructure in micro actuator are used as optical interfaces with the fibers. Line edge roughness (LER) of reflective sidewalls is essential to device performance. A method is presented through analyzing high-resolution top-down scanning electron microscope (SEM) images to characterize sidewall line edge roughness (LER) of Si microstructures in thermal micro actuator, only conventional SEM scanning technique is required.
Original languageEnglish
Pages (from-to)985-990
Number of pages6
JournalThe International Journal of Applied Electromagnetics and Mechanics
Issue number3-4
Publication statusPublished - 1 Jan 2010


  • scanning electron microscope (SEM)
  • line edge roughness (LER)
  • deep reactive ion etching (DRIE)
  • Micro actuator


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