Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?

Fiacre E. Rougieux; Nicholas E. Grant; Daniel Macdonald; John D. Murphy

doi:10.1109/PVSC.2015.7355687

Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?

Fiacre E. Rougieux
, Nicholas E. Grant
, Daniel Macdonald
, John D. Murphy

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recombination active defects are found in as-grown high-purity Czochralski (Cz) and Floating Zone (FZ) n-type silicon wafers. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use photoluminescence imaging, lifetime spectroscopy, and defect imaging along the ingot to help identify the defect(s). Our experimental findings suggest that vacancy-related complexes incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355687
Publication status	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

amorphous materials
charge carrier lifetime
photovoltaic cells
silicon

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7355687

Cite this

Rougieux, F. E., Grant, N. E., Macdonald, D., & Murphy, J. D. (2015). Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon? In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7355687 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2015.7355687

Rougieux, Fiacre E. ; Grant, Nicholas E. ; Macdonald, Daniel et al. / Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers (IEEE), 2015. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

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title = "Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?",

abstract = "Recombination active defects are found in as-grown high-purity Czochralski (Cz) and Floating Zone (FZ) n-type silicon wafers. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use photoluminescence imaging, lifetime spectroscopy, and defect imaging along the ingot to help identify the defect(s). Our experimental findings suggest that vacancy-related complexes incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.",

keywords = "amorphous materials, charge carrier lifetime, photovoltaic cells, silicon",

author = "Rougieux, \{Fiacre E.\} and Grant, \{Nicholas E.\} and Daniel Macdonald and Murphy, \{John D.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7355687",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

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Rougieux, FE, Grant, NE, Macdonald, D & Murphy, JD 2015, Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon? in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355687, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers (IEEE), 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7355687

Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon? / Rougieux, Fiacre E.; Grant, Nicholas E.; Macdonald, Daniel et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers (IEEE), 2015. 7355687 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution