Abstract
Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N, a reduction of ∼79 meV/%N. The experimentally observed band gap reduction in molecular-beam epitaxial InNSb thin films is reproduced by a five band k · P band anticrossing model incorporating a nitrogen level, EN, 0.75 eV above the valence band maximum of the host InSb and an interaction coupling matrix element between the host conduction band and the N level of β = 1.80 eV. This observation is consistent with the presented results from hybrid density functional theory.
Original language | English |
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Article number | 132104 |
Journal | Applied Physics Letters |
Volume | 109 |
Issue number | 13 |
DOIs | |
Publication status | Published - 26 Sept 2016 |
Bibliographical note
Funding Information:The experimental work was supported by the Engineering and Physical Sciences Research Council (EPSRC) under Grant No. EP/G004447/2. W.M.L. acknowledges support from the National Science Center (NCN) Grant No. 2014/13/D/ST3/01947. D.O.S. and T.D.V. acknowledge support from the Materials Design Network. J.B. and C.R.A.C. acknowledge funding from the EPSRC Grant No. EP/K016288/1. The hybrid DFT was performed on the national supercomputer ARCHER via funding from the EPSRC Grant No. EP/L000202/1.
Publisher Copyright:
© 2016 Author(s).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)