Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber

Tim D. Veal; Nathaniel Feldberg; Nicholas F. Quackenbush; Wojciech M. Linhart; David O. Scanlon; Louis F.J. Piper; Steven M. Durbin

doi:10.1002/aenm.201501462

Band Gap Dependence on Cation Disorder in ZnSnN₂ Solar Absorber

Tim D. Veal^*, Nathaniel Feldberg, Nicholas F. Quackenbush, Wojciech M. Linhart, David O. Scanlon, Louis F.J. Piper, Steven M. Durbin

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

The band gap of earth-abundant ZnSnN₂ can be tuned between 1 and 2 eV by varying the growth conditions and resulting cation disorder. The optical absorption edges and carrier densities fall between model curves for cation-ordered orthorhombic and disordered wurtzite ZnSnN₂. Hard X-ray photoemission spectra suggest different degrees of cation disorder from comparison with hybrid DFT-calculated densities of states.

Original language	English
Article number	1501462
Journal	Advanced Energy Materials
Volume	5
Issue number	24
DOIs	https://doi.org/10.1002/aenm.201501462
Publication status	Published - 23 Dec 2015

Bibliographical note

Publisher Copyright:
© 2015 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

band gap
energy materials
semiconductors
thin films
ZnSnN

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/aenm.201501462

Cite this

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abstract = "The band gap of earth-abundant ZnSnN2 can be tuned between 1 and 2 eV by varying the growth conditions and resulting cation disorder. The optical absorption edges and carrier densities fall between model curves for cation-ordered orthorhombic and disordered wurtzite ZnSnN2. Hard X-ray photoemission spectra suggest different degrees of cation disorder from comparison with hybrid DFT-calculated densities of states.",

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