A single-source precursor approach to solution processed indium arsenide thin films

Peter Marchand; Sanjayan Sathasivam; Benjamin A.D. Williamson; David Pugh; Salem M. Bawaked; Sulaiman N. Basahel; Abdullah Y. Obaid; David O. Scanlon; Ivan P. Parkin; Claire J. Carmalt

doi:10.1039/c6tc02293f

A single-source precursor approach to solution processed indium arsenide thin films

Peter Marchand, Sanjayan Sathasivam, Benjamin A.D. Williamson, David Pugh, Salem M. Bawaked, Sulaiman N. Basahel, Abdullah Y. Obaid, David O. Scanlon, Ivan P. Parkin, Claire J. Carmalt^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports the synthesis of the novel single-source precursor, [{(MeInAs^tBu)₃}₂(Me₂InAs(^tBu)H)₂] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10^-3 Ω cm) and carrier mobility (410 cm² V^-1 s^-1) values despite growth on amorphous glass substrates.

Original language	English
Pages (from-to)	6761-6768
Number of pages	8
Journal	Journal of Materials Chemistry C
Volume	4
Issue number	28
DOIs	https://doi.org/10.1039/c6tc02293f
Publication status	Published - 2016

Bibliographical note

Publisher Copyright:
© 2016 The Royal Society of Chemistry.

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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@article{46f8b5430ff94d9687eeef1cd421cac9,

title = "A single-source precursor approach to solution processed indium arsenide thin films",

abstract = "This paper reports the synthesis of the novel single-source precursor, [{(MeInAstBu)3}2(Me2InAs(tBu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10-3 Ω cm) and carrier mobility (410 cm2 V-1 s-1) values despite growth on amorphous glass substrates.",

author = "Peter Marchand and Sanjayan Sathasivam and Williamson, {Benjamin A.D.} and David Pugh and Bawaked, {Salem M.} and Basahel, {Sulaiman N.} and Obaid, {Abdullah Y.} and Scanlon, {David O.} and Parkin, {Ivan P.} and Carmalt, {Claire J.}",

note = "Publisher Copyright: {\textcopyright} 2016 The Royal Society of Chemistry.",

year = "2016",

doi = "10.1039/c6tc02293f",

language = "English",

volume = "4",

pages = "6761--6768",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

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T1 - A single-source precursor approach to solution processed indium arsenide thin films

AU - Marchand, Peter

AU - Sathasivam, Sanjayan

AU - Williamson, Benjamin A.D.

AU - Pugh, David

AU - Bawaked, Salem M.

AU - Basahel, Sulaiman N.

AU - Obaid, Abdullah Y.

AU - Scanlon, David O.

AU - Parkin, Ivan P.

AU - Carmalt, Claire J.

PY - 2016

Y1 - 2016

N2 - This paper reports the synthesis of the novel single-source precursor, [{(MeInAstBu)3}2(Me2InAs(tBu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10-3 Ω cm) and carrier mobility (410 cm2 V-1 s-1) values despite growth on amorphous glass substrates.

AB - This paper reports the synthesis of the novel single-source precursor, [{(MeInAstBu)3}2(Me2InAs(tBu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10-3 Ω cm) and carrier mobility (410 cm2 V-1 s-1) values despite growth on amorphous glass substrates.

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DO - 10.1039/c6tc02293f

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VL - 4

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EP - 6768

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 28

ER -

A single-source precursor approach to solution processed indium arsenide thin films

Abstract

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