A Fullerene derivative as an electron beam resist for nanolithography

A.P.G. Robinson; R.E. Palmer; T. Tada; T. Kanayama; J.A. Preece

doi:10.1063/1.120978

A Fullerene derivative as an electron beam resist for nanolithography

A.P.G. Robinson, R.E. Palmer, T. Tada, T. Kanayama, J.A. Preece

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Abstract

We have explored the application of chemical derivatives of C60 as high-resolution electron beam resists. Facile spin coating was used to produce ∼100-nm-thick films of a C60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of ∼1 mC/cm2 for 20 keV electrons, an order of magnitude higher than that of C60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced

Original language	English
Article number	1302
Journal	Applied Physics Letters
Volume	72
Issue number	11
DOIs	https://doi.org/10.1063/1.120978
Publication status	Published - 1998

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title = "A Fullerene derivative as an electron beam resist for nanolithography",

abstract = "We have explored the application of chemical derivatives of C60 as high-resolution electron beam resists. Facile spin coating was used to produce ∼100-nm-thick films of a C60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of ∼1 mC/cm2 for 20 keV electrons, an order of magnitude higher than that of C60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced",

author = "A.P.G. Robinson and R.E. Palmer and T. Tada and T. Kanayama and J.A. Preece",

year = "1998",

doi = "10.1063/1.120978",

language = "English",

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T1 - A Fullerene derivative as an electron beam resist for nanolithography

AU - Robinson, A.P.G.

AU - Palmer, R.E.

AU - Tada, T.

AU - Kanayama, T.

AU - Preece, J.A.

PY - 1998

Y1 - 1998

N2 - We have explored the application of chemical derivatives of C60 as high-resolution electron beam resists. Facile spin coating was used to produce ∼100-nm-thick films of a C60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of ∼1 mC/cm2 for 20 keV electrons, an order of magnitude higher than that of C60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced

AB - We have explored the application of chemical derivatives of C60 as high-resolution electron beam resists. Facile spin coating was used to produce ∼100-nm-thick films of a C60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of ∼1 mC/cm2 for 20 keV electrons, an order of magnitude higher than that of C60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced

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VL - 72

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

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ER -

A Fullerene derivative as an electron beam resist for nanolithography

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