A Fullerene derivative as an electron beam resist for nanolithography

A.P.G. Robinson, R.E. Palmer, T. Tada, T. Kanayama, J.A. Preece

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)


We have explored the application of chemical derivatives of C60 as high-resolution electron beam resists. Facile spin coating was used to produce ∼100-nm-thick films of a C60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of ∼1 mC/cm2 for 20 keV electrons, an order of magnitude higher than that of C60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced
Original languageEnglish
Article number1302
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 1998


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