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Abstract
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
| Original language | English |
|---|---|
| Pages (from-to) | 2076 |
| Number of pages | 1 |
| Journal | Small |
| Volume | 3 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 3 Dec 2007 |
Keywords
- fullerenes
- lithography
- electron beams
- resists
- chemical amplification
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Dive into the research topics of 'A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist'. Together they form a unique fingerprint.Projects
- 1 Finished
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PLATFORM: Nanostructured Surfaces
Palmer, R. (Principal Investigator), Guo, Q. (Co-Investigator), Harrison, R. (Co-Investigator), Heath, J. (Co-Investigator), Jones, I. (Co-Investigator), Li, Z. (Co-Investigator), Moss, P. (Co-Investigator) & Robinson, A. (Co-Investigator)
Engineering & Physical Science Research Council
1/12/02 → 31/05/07
Project: Research Councils