A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

Cheng Guo; Peter G. Huggard; Yuvaraj Dhayalan; Xiaobang Shang; Jeffrey Powell; Michael J. Lancaster; Jun Xu; Yi Wang; Hui Wang; Byron Alderman

doi:10.1109/TMTT.2019.2955684

A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

Cheng Guo, Peter G. Huggard, Yuvaraj Dhayalan, Xiaobang Shang, Jeffrey Powell, Michael J. Lancaster, Jun Xu, Yi Wang, Hui Wang, Byron Alderman

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Abstract

This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-μm-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.

Original language	English
Pages (from-to)	1-10
Journal	IEEE Transactions on Microwave Theory and Techniques
Early online date	27 Dec 2019
DOIs	https://doi.org/10.1109/TMTT.2019.2955684
Publication status	E-pub ahead of print - 27 Dec 2019

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Guo_et_al_2020_A_135-150-GHz_frequency_tripler_IEEE_Transactions_on_Microwave_Theory_and_TechniquesFinal published version, 4.17 MBLicence: Creative Commons: Attribution (CC BY)

https://ieeexplore.ieee.org/document/8944031/Licence: Creative Commons: Attribution (CC BY)

Micromachined Circuits For Terahertz Communications
Lancaster, M. (Principal Investigator), Constantinou, C. (Co-Investigator), Dimov, S. (Co-Investigator), Feresidis, A. (Co-Investigator), Gardner, P. (Co-Investigator), Cherniakov, M. (Co-Investigator), Gashinova, M. (Co-Investigator) & Huang, F. (Co-Investigator)
Engineering & Physical Science Research Council
22/06/15 → 22/12/18
Project: Research

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title = "A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides",

abstract = "This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-μm-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.",

author = "Cheng Guo and Huggard, {Peter G.} and Yuvaraj Dhayalan and Xiaobang Shang and Jeffrey Powell and Lancaster, {Michael J.} and Jun Xu and Yi Wang and Hui Wang and Byron Alderman",

year = "2019",

month = dec,

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doi = "10.1109/TMTT.2019.2955684",

language = "English",

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AU - Guo, Cheng

AU - Huggard, Peter G.

AU - Dhayalan, Yuvaraj

AU - Shang, Xiaobang

AU - Powell, Jeffrey

AU - Lancaster, Michael J.

AU - Xu, Jun

AU - Wang, Yi

AU - Wang, Hui

AU - Alderman, Byron

PY - 2019/12/27

Y1 - 2019/12/27

N2 - This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-μm-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.

AB - This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-μm-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.

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DO - 10.1109/TMTT.2019.2955684

M3 - Article

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

ER -

A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

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Micromachined Circuits For Terahertz Communications

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