3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

G. Zhang; J. W. Pomeroy; M. E. Navarro; H. Cao; M. Kuball; Y. Ding

doi:10.1109/TCPMT.2021.3072994

3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

G. Zhang
, J. W. Pomeroy
, M. E. Navarro
, H. Cao
, M. Kuball
, Y. Ding

Research output: Contribution to journal › Article › peer-review

Abstract

Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by 60% with respect to GaN RF HEMTs mounted on conventional packaging.

Original language	English
Article number	9402857
Pages (from-to)	748-754
Number of pages	7
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	11
Issue number	5
Early online date	13 Apr 2021
DOIs	https://doi.org/10.1109/TCPMT.2021.3072994
Publication status	Published - May 2021

Bibliographical note

Funding Information:
Manuscript received November 9, 2020; revised March 16, 2021; accepted April 9, 2021. Date of publication April 13, 2021; date of current version May 17, 2021. This work was supported by the Engineering and Physical Sciences Research (EPSRC) Council, U.K. (Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs), under Grant EP/P00945X/1. Recommended for publication by Associate Editor M. Iyengar upon evaluation of reviewers’ comments. (Corresponding author: Y. Ding.) G. Zhang, M. E. Navarro, H. Cao, and Y. Ding are with the Birmingham Centre for Energy Storage, School of Chemical Engineering, University of Birmingham, Birmingham B15 2TT, U.K. (e-mail: [email protected]).

Publisher Copyright:
© 2011-2012 IEEE.

Keywords

3D print
Cooling
Diamond
Gallium nitride
GaN
Heat transfer
Heating systems
micro-jet impingent cooling
Three-dimensional displays
transistor
Transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TCPMT.2021.3072994Licence: None: All rights reserved

Cite this

@article{5133585db9e544c58b2a544ce42c7038,

title = "3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors",

abstract = "Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by 60\% with respect to GaN RF HEMTs mounted on conventional packaging.",

keywords = "3D print, Cooling, Diamond, Gallium nitride, GaN, Heat transfer, Heating systems, micro-jet impingent cooling, Three-dimensional displays, transistor, Transistors",

author = "G. Zhang and Pomeroy, \{J. W.\} and Navarro, \{M. E.\} and H. Cao and M. Kuball and Y. Ding",

note = "Funding Information: Manuscript received November 9, 2020; revised March 16, 2021; accepted April 9, 2021. Date of publication April 13, 2021; date of current version May 17, 2021. This work was supported by the Engineering and Physical Sciences Research (EPSRC) Council, U.K. (Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs), under Grant EP/P00945X/1. Recommended for publication by Associate Editor M. Iyengar upon evaluation of reviewers{\textquoteright} comments. (Corresponding author: Y. Ding.) G. Zhang, M. E. Navarro, H. Cao, and Y. Ding are with the Birmingham Centre for Energy Storage, School of Chemical Engineering, University of Birmingham, Birmingham B15 2TT, U.K. (e-mail: [email protected]). Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2021",

month = may,

doi = "10.1109/TCPMT.2021.3072994",

language = "English",

volume = "11",

pages = "748--754",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "5",

}

TY - JOUR

T1 - 3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

AU - Zhang, G.

AU - Pomeroy, J. W.

AU - Navarro, M. E.

AU - Cao, H.

AU - Kuball, M.

AU - Ding, Y.

N1 - Funding Information: Manuscript received November 9, 2020; revised March 16, 2021; accepted April 9, 2021. Date of publication April 13, 2021; date of current version May 17, 2021. This work was supported by the Engineering and Physical Sciences Research (EPSRC) Council, U.K. (Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs), under Grant EP/P00945X/1. Recommended for publication by Associate Editor M. Iyengar upon evaluation of reviewers’ comments. (Corresponding author: Y. Ding.) G. Zhang, M. E. Navarro, H. Cao, and Y. Ding are with the Birmingham Centre for Energy Storage, School of Chemical Engineering, University of Birmingham, Birmingham B15 2TT, U.K. (e-mail: [email protected]). Publisher Copyright: © 2011-2012 IEEE.

PY - 2021/5

Y1 - 2021/5

N2 - Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by 60% with respect to GaN RF HEMTs mounted on conventional packaging.

AB - Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by 60% with respect to GaN RF HEMTs mounted on conventional packaging.

KW - 3D print

KW - Cooling

KW - Diamond

KW - Gallium nitride

KW - GaN

KW - Heat transfer

KW - Heating systems

KW - micro-jet impingent cooling

KW - Three-dimensional displays

KW - transistor

KW - Transistors

UR - https://www.scopus.com/pages/publications/85104269223

U2 - 10.1109/TCPMT.2021.3072994

DO - 10.1109/TCPMT.2021.3072994

M3 - Article

AN - SCOPUS:85104269223

SN - 2156-3950

VL - 11

SP - 748

EP - 754

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

IS - 5

M1 - 9402857

ER -

3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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