Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by 60% with respect to GaN RF HEMTs mounted on conventional packaging.
|Number of pages||7|
|Journal||IEEE Transactions on Components, Packaging and Manufacturing Technology|
|Early online date||13 Apr 2021|
|Publication status||Published - May 2021|
Bibliographical noteFunding Information:
Manuscript received November 9, 2020; revised March 16, 2021; accepted April 9, 2021. Date of publication April 13, 2021; date of current version May 17, 2021. This work was supported by the Engineering and Physical Sciences Research (EPSRC) Council, U.K. (Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs), under Grant EP/P00945X/1. Recommended for publication by Associate Editor M. Iyengar upon evaluation of reviewers’ comments. (Corresponding author: Y. Ding.) G. Zhang, M. E. Navarro, H. Cao, and Y. Ding are with the Birmingham Centre for Energy Storage, School of Chemical Engineering, University of Birmingham, Birmingham B15 2TT, U.K. (e-mail: firstname.lastname@example.org).
© 2011-2012 IEEE.
- 3D print
- Gallium nitride
- Heat transfer
- Heating systems
- micro-jet impingent cooling
- Three-dimensional displays
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering