3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

G. Zhang; J. W. Pomeroy; M. E. Navarro; H. Cao; M. Kuball; Y. Ding

doi:10.1109/TCPMT.2021.3072994

3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

G. Zhang, J. W. Pomeroy, M. E. Navarro, H. Cao, M. Kuball, Y. Ding

Research output: Contribution to journal › Article › peer-review

Abstract

Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by 60% with respect to GaN RF HEMTs mounted on conventional packaging.

Original language	English
Article number	9402857
Pages (from-to)	748-754
Number of pages	7
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	11
Issue number	5
Early online date	13 Apr 2021
DOIs	https://doi.org/10.1109/TCPMT.2021.3072994
Publication status	Published - May 2021

Bibliographical note

Funding Information:
Manuscript received November 9, 2020; revised March 16, 2021; accepted April 9, 2021. Date of publication April 13, 2021; date of current version May 17, 2021. This work was supported by the Engineering and Physical Sciences Research (EPSRC) Council, U.K. (Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs), under Grant EP/P00945X/1. Recommended for publication by Associate Editor M. Iyengar upon evaluation of reviewers’ comments. (Corresponding author: Y. Ding.) G. Zhang, M. E. Navarro, H. Cao, and Y. Ding are with the Birmingham Centre for Energy Storage, School of Chemical Engineering, University of Birmingham, Birmingham B15 2TT, U.K. (e-mail: y.ding@bham.ac.uk).

Publisher Copyright:
© 2011-2012 IEEE.

Keywords

3D print
Cooling
Diamond
Gallium nitride
GaN
Heat transfer
Heating systems
micro-jet impingent cooling
Three-dimensional displays
transistor
Transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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Cite this

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title = "3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors",

abstract = "Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by 60% with respect to GaN RF HEMTs mounted on conventional packaging.",

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note = "Funding Information: Manuscript received November 9, 2020; revised March 16, 2021; accepted April 9, 2021. Date of publication April 13, 2021; date of current version May 17, 2021. This work was supported by the Engineering and Physical Sciences Research (EPSRC) Council, U.K. (Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs), under Grant EP/P00945X/1. Recommended for publication by Associate Editor M. Iyengar upon evaluation of reviewers{\textquoteright} comments. (Corresponding author: Y. Ding.) G. Zhang, M. E. Navarro, H. Cao, and Y. Ding are with the Birmingham Centre for Energy Storage, School of Chemical Engineering, University of Birmingham, Birmingham B15 2TT, U.K. (e-mail: y.ding@bham.ac.uk). Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

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3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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