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IAA 2012 - FOF: A Fullerene Resist to Enable Next Generation Semiconductor Fabrication
Robinson, Alex
(Principal Investigator)
Chemical Engineering
Overview
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Research output
(1)
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Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.
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Keyphrases
Electron Beam Resist
100%
Chemically Amplified
100%
Fullerene
100%
Hazardous Solvent
50%
Electron Beam Lithography
50%
Electron Beam
50%
Line Width Roughness
50%
High Dose
50%
Negative Tone
50%
Resist Material
50%
Molecular Resist
50%
Engineering
Line Width
100%
Phenolics
100%
Fullerene
100%
Resist Material
50%
Electron Optical Lithography
50%
Material Science
Fullerene
100%
Linewidth
100%
Lithography
50%